Scanning tunneling microscopy of defect states in the semiconductor Bi2Se3
نویسندگان
چکیده
Scanning tunneling spectroscopy images of Bi2Se3 doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in Bi2Se3 can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.
منابع مشابه
The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3
In this Letter we present scanning tunneling microscopy densityof-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bul...
متن کاملSurface scattering via bulk continuum states in the 3D topological insulator Bi2Se3.
We have performed scanning tunneling microscopy and differential tunneling conductance (dI/dV) mapping for the surface of the three-dimensional topological insulator Bi(2)Se(3). The fast Fourier transformation applied to the dI/dV image shows an electron interference pattern near Dirac node despite the general belief that the backscattering is well suppressed in the bulk energy gap region. The ...
متن کاملExperimental evidence for s-wave pairing symmetry in superconducting Cu(x)Bi2Se3 single crystals using a scanning tunneling microscope.
Topological superconductors represent a newly predicted phase of matter that is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of their topological character, topological superconductors support solid-state realizations of Majorana fermions at their boundaries. The recently discovered superconductor Cu(x)Bi(2)Se(3) has been theoretically...
متن کاملScanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.
We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogene...
متن کاملObservation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
The scanning tunneling microscope is used to study arsenic-related point defects in low-temperaturegrown GaAs. Tunneling spectroscopy reveals a band of donor states located near E„+0. 5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 A from the core. The structure of the defect is found to be consistent with that of an isolate...
متن کامل